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IPW60R099C6

Part No IPW60R099C6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 37.9A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 1.21mA
Max Gate Charge 119nC @ 10V
Max Input Capacitance 2660pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 278W (Tc)
Maximum Rds On at Id,Vgs 99 mOhm @ 18.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 087413-IPW60R099C6
Family Name IPW60R099C6
Introduction Date February 09, 2010
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2019
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPW60R099C6 CAD Model

Description

The Infineon Technologies 087413-IPW60R099C6 is a N-Channel MOSFET with a Drain-Source Breakdown Voltage of 600V and a Continuous Drain Current of 37.9A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 37.9A (Tc) @ 25°C
  • Maximum Rds On: 99 mOhm @ 18.1A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Package: PG-TO247-3
  • Suitable for: Discrete Semiconductor Products
  • Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 278W (Tc)
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8848 $58.6176
28+ $4.0080 $112.2240
44+ $3.8827 $170.8388
60+ $3.7575 $225.4500
78+ $3.6323 $283.3194
104+ $3.2565 $338.6760
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Availability: 14,970 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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