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IPW65R041CFD7XKSA1

Part No IPW65R041CFD7XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 650V FET COOLMOS TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ CFD7
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 24.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.24mA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4975 pF @ 400 V
Power Dissipation (Max) 227W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Base Product Number IPW65R041
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 921366-IPW65R041CFD7XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW65R041CFD7XKSA1 CAD Model

Description

The IPW65R041CFD7XKSA1 is a N-channel MOSFET transistor manufactured by Infineon Technologies.

  • Series: CoolMOS CFD7
  • Drain to Source Voltage Rating: 650 V
  • Continuous Drain Current Rating: 50A
  • Rds On (Max): 41mOhm @ a drain current of 24.8A and a gate-source voltage of 10V
  • Maximum Power Dissipation: 227W
  • Package: TO-247-3
  • Gate Charge: 102 nC @ a gate-source voltage of 10V
  • Operating Temperature Range: -55°C to 150°C
  • Classification: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.5636 $50.0724
22+ $4.5651 $100.4322
34+ $4.4224 $150.3616
47+ $4.2797 $201.1459
61+ $4.1371 $252.3631
81+ $3.7091 $300.4371
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,426 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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