The IPW65R065C7 is a CoolSiC™ MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-voltage, high-frequency power conversion applications, utilizing Infineon's silicon carbide (SiC) technology.

Applications

• Power Factor Correction (PFC)
• DC-DC converters
• On-board chargers (OBC) for electric vehicles
• Uninterruptible power supplies (UPS)
• Solar inverters

Features

• N-Channel MOSFET
• CoolSiC™ silicon carbide technology
• Low on-resistance RDS(on)
• High blocking voltage
• Zero reverse recovery charge (Qrr)
• Temperature independent switching behavior

Benefits

• Increased efficiency in power conversion systems due to low RDS(on) and zero Qrr, minimizing switching losses.
• Higher switching frequencies, enabling smaller and lighter power supply designs.
• Improved thermal performance due to the superior thermal conductivity of silicon carbide.
• Enhanced system reliability and robustness in high-voltage and high-temperature applications.
• Reduced cooling requirements.
• Simplified system design due to temperature-independent switching behavior.

Additional Details

The IPW65R065C7 leverages silicon carbide (SiC) technology to provide significantly improved performance compared to traditional silicon-based MOSFETs. The zero reverse recovery charge eliminates switching losses, enabling higher efficiency and higher frequency operation. The device operates over a wide temperature range with stable switching characteristics. This MOSFET offers improved reliability and robustness.