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IPW65R310CFDFKSA1

Part No IPW65R310CFDFKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 11.4A TO247-3 / N-Channel 650 V 11.4A (Tc) 104.2W (Tc) Through Hole PG-TO247-3-1
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 310mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V
Power Dissipation (Max) 104.2W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package / Case TO-247-3
Base Product Number IPW65R
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IPW65R310CFD,SP000890688,INFINFIPW65R310CFDFKSA1,IPW65R310CFD-ND,2156-IPW65R310CFDFKSA1-IT
Standard Package 240
Win Source Part Number 1199675-IPW65R310CFDFKSA1
Ultra Librarian 3D Model Ultra Librarian IPW65R310CFDFKSA1 CAD Model

Description

The IPW65R310CFDFKSA1 is a N-Channel MOSFET transistor from the CoolMOS series from Infineon Technologies.

  • Drain to Source Voltage: 650 V
  • Continuous Drain Current: 11.4A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Mounting Type: Through-Hole
  • Package/Case: TO-247-3
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
  • Gate Threshold Voltage (Vgs(th)): 4.5V @ 440μA
  • Status: Obsolete

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