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Same model may have multiple batches, images only for reference.
IRF1010NLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1010NLPBF

Part No IRF1010NLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 85A TO-262
Datasheet
IRF1010NLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046392-IRF1010NLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1010NLPBF CAD Model

Description

The Infineon Technologies 1046392-IRF1010NLPBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 85A
  • Maximum Power Dissipation: 180W
  • Gate-Source Voltage: ±20V
  • Supply and Demand Status: Balanced
  • Lifecycle Status: Obsolete (EOL)

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