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Same model may have multiple batches, images only for reference.
IRF1010NPBF
Same model may have multiple batches, images only for reference.

IRF1010NPBF

Part No IRF1010NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 85A TO-220AB
Datasheet
IRF1010NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069235-IRF1010NPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1010NPBF CAD Model

Description

The IRF1010NPBF is a N-channel MOSFET manufactured by Infineon Technologies.

  • Status: Active
  • Popularity: Medium
  • Supply and Demand: Limited
  • Mounting: Through-hole
  • Maximum Power Dissipation: 180W
  • Operating Temperature Range: -55°C to 175°C
  • Drain-Source Breakdown Voltage: 55V

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9750 $53.6250
125+ $0.8000 $100.0000
195+ $0.7750 $151.1250
270+ $0.7500 $202.5000
345+ $0.7250 $250.1250
465+ $0.6500 $302.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 81 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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