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Same model may have multiple batches, images only for reference.
IRF1404ZSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1404ZSTRRPBF

Part No IRF1404ZSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A D2PAK / Trans MOSFET N-CH Si 40V 180A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRF1404ZSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 150μA
Gate Charge (Qg) (Maximum) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4340pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 200W (Tc)
Rds On (Maximum) @ Id, Vgs 3.7 mOhm @ 75A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777006-IRF1404ZSTRRPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRF1404
Introduction Date January 03, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF1404ZSTRRPBF CAD Model

Description

The Infineon Technologies IRF1404ZSTRRPBF is a HEXFET MOSFET transistor that has a maximum continuous drain current of 120A @ 25°C and a maximum drain-source voltage of 40V.

  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 4340pF @ 25V
  • Power Dissipation: 200W @ Tc
  • Rds on: 3.7 mOhm @ 75A, 10V
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Mounting: Surface-Mounting
  • ECCN: EAR99
  • Product Status: Obsolete / End of Life

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