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IRF1407PBF

Part No IRF1407PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 130A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 250nC @ 10V
Max Input Capacitance 5600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017417-IRF1407PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF1407PBF CAD Model

Description

The Infineon Technologies IRF1407PBF is a N-channel MOSFET transistor that is widely used in the electronics industry.

  • Maximum Power Dissipation: 330W at Tc
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 130A (Tc) @ 25°C
  • Maximum Rds On: 7.8 mOhm @ 78A, 10V
  • Maximum Gate Charge: 250nC @ 10V
  • Maximum Input Capacitance: 5600pF @ 25V
  • Package: TO-220AB package
  • Popularity: common-used part

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6765 $50.7375
160+ $0.6337 $101.3920
245+ $0.6123 $150.0135
355+ $0.5695 $202.1725
460+ $0.5481 $252.1260
570+ $0.5267 $300.2190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 42,539 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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