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IRF2804S-7PPBF

Part No IRF2804S-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 40V 320A 7-Pin(6+Tab) D2PAK Tube / MOSFET N-CH 40V 160A D2PAK-7
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 6930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 160A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 125658-IRF2804S-7PPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management
Family Name IRF2804S-7P
Introduction Date October 10, 2005
ECCN EAR99
Country of Origin China , Germany, Mexico, United Kingdom
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF2804S-7PPBF CAD Model

Description

The Infineon Technologies IRF2804S-7PPBF is a N-Channel MOSFET that is commonly used in power management.

  • Maximum Power Dissipation: 330W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 160A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On: 1.6 mOhm @ 160A, 10V
  • Package: D2PAK (7-Lead)
  • Recommendation: not recommended for new designs
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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Availability: 6,289 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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