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IRF2805LPBF

Part No IRF2805LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 135A TO-262
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 230nC @ 10V
Max Input Capacitance 5110pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 4.7 mOhm @ 104A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046421-IRF2805LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF2805LPBF CAD Model

Description

The Infineon Technologies IRF2805LPBF is an N-Channel MOSFET with a drain-source breakdown voltage of 55V and continuous drain current of 135A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 135A @ 25°C
  • Power Dissipation: 200W (Max)
  • Rds On @ Id,Vgs: 4.7 mOhm @ 104A, 10V (Max)
  • Gate-Source Voltage: ±20V (Max)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Gate Charge: 230nC @ 10V (Max)
  • Input Capacitance: 5110pF @ 25V (Max)
  • Category: Discrete Semiconductor Products
  • Mounting: Through Hole
  • Case/Package: TO-262

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4382 $58.5168
58+ $2.0005 $116.0290
90+ $1.9381 $174.4290
124+ $1.8757 $232.5868
160+ $1.8122 $289.9520
214+ $1.6251 $347.7714
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,710 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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