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Same model may have multiple batches, images only for reference.
IRF3704ZCLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF3704ZCLPBF

Part No IRF3704ZCLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 67A TO-262
Datasheet
IRF3704ZCLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1220pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 7.9 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069268-IRF3704ZCLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3704ZCLPBF CAD Model

Description

The Infineon Technologies IRF3704ZCLPBF is a N-Channel MOSFET transistor that is now obsolete (EOL).

  • Designed for: discrete semiconductor products
  • Power Dissipation: 57W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 67A (Tc) @ 25°C
  • Maximum Rds On: 7.9 mOhm @ 21A, 10V
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Max Gate Charge: 13nC @ 4.5V
  • Package: TO-262
  • Mounting: Through Hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand: limited

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