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IRF3706STRLPBF Real Image IRF3706STRLPBF real image
Same model may have multiple batches, images only for reference.
IRF3706STRLPBF Real Image IRF3706STRLPBF real image
IRF3706STRLPBF Real Image IRF3706STRLPBF real image
Same model may have multiple batches, images only for reference.

IRF3706STRLPBF

Part No IRF3706STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 77A D2PAK
Datasheet
IRF3706STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046456-IRF3706STRLPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRF3706STRLPBF CAD Model

Description

The Infineon Technologies IRF3706STRLPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 20V and a continuous drain current of 77A at 25°C.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 77A @ 25°C
  • Power Dissipation: 88W
  • Maximum Rds On: 8.5 mOhm @ 15A and 10V
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 35nC @ 4.5V
  • Input Capacitance: 2410pF @ 10V
  • Gate-Source Voltage: ±12V
  • Package: D2PAK
  • Operating Temperature: -55°C to 175°C

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995+ $0.3488 $347.0560
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