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Same model may have multiple batches, images only for reference.
IRF3707ZCS Real Image
Same model may have multiple batches, images only for reference.

IRF3707ZCS

Part No IRF3707ZCS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 59A D2PAK
Datasheet
IRF3707ZCS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1210pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046462-IRF3707ZCS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3707ZCS CAD Model

Description

The Infineon Technologies 426498 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 57W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 59A (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Input Capacitance: 1210pF @ 15V
  • Maximum Rds On at Id,Vgs: 9.5 mOhm @ 21A, 10V
  • Package: D2PAK case/package
  • Mounting: SMD (SMT) mounting
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3063 $58.7835
110+ $1.0718 $117.8980
170+ $1.0383 $176.5110
230+ $1.0049 $231.1270
300+ $0.9714 $291.4200
400+ $0.8709 $348.3600
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Availability: 34,645 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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