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Same model may have multiple batches, images only for reference.
IRF3708L
Same model may have multiple batches, images only for reference.

IRF3708L

Part No IRF3708L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 62A TO-262
Datasheet
IRF3708L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2417pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069274-IRF3708L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3708L CAD Model

Description

The Infineon Technologies IRF3708L is an N-channel MOSFET that comes in a TO-262 package with long leads.

  • Maximum Power Dissipation: 87W (Tc)
  • Drain-Source Breakdown Voltage: 30V

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Availability: 10,700 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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