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IRF3709STRR

Part No IRF3709STRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 90A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 41nC @ 5V
Max Input Capacitance 2672pF @ 16V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046475-IRF3709STRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3709STRR CAD Model

Description

The Infineon Technologies IRF3709STRR is an N-channel MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current of 90A @ 25°C.

  • Manufacturer: Infineon Technologies
  • Product Name: IRF3709STRR
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 90A @ 25°C
  • Power Dissipation: 3.1W (Ta), 120W (Tc)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Package: D2PAK
  • Maximum Rds On: 9 mOhm @ 15A and 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1142 $50.1390
110+ $0.9143 $100.5730
170+ $0.8857 $150.5690
235+ $0.8571 $201.4185
305+ $0.8286 $252.7230
405+ $0.7428 $300.8340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,850 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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