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Same model may have multiple batches, images only for reference.
IRF3709ZCS Real Image
Same model may have multiple batches, images only for reference.

IRF3709ZCS

Part No IRF3709ZCS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 87A D2PAK
Datasheet
IRF3709ZCS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046477-IRF3709ZCS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3709ZCS CAD Model

Description

The Infineon Technologies 1046477-IRF3709ZCS is a MOSFET transistor with a N-Channel polarity.

  • FET Type: N-Channel
  • Power Dissipation (Max) @ Tc: 79 W
  • Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
  • Voltage - Drain to Source Breakdown (Vdss): 30 V
  • Vgs(th) (Max) @ Id: 2.25V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5V
  • Input Capacitance (Ciss) @ Vds: 2130 pF @ 15 V
  • Package / Case: D2PAK
  • Supply and Demand Status: Sufficient

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Quantity Unit Price Ext. Price
85+ $0.6861 $58.3185
210+ $0.5625 $118.1250
320+ $0.5452 $174.4640
440+ $0.5278 $232.2320
570+ $0.5105 $290.9850
760+ $0.4574 $347.6240
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