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Same model may have multiple batches, images only for reference.
IRF3709ZCSTRR Real Image
Same model may have multiple batches, images only for reference.

IRF3709ZCSTRR

Part No IRF3709ZCSTRR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 87A D2PAK
Datasheet
IRF3709ZCSTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046479-IRF3709ZCSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3709ZCSTRR CAD Model

Description

The Infineon Technologies IRF3709ZCSTRR is a N-channel MOSFET transistor that is suitable for various applications.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 87A @ 25°C
  • Maximum Rds On: 6.3 mOhm @ 21A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 26nC @ 4.5V
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 79W (Tc)
  • Lifecycle Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
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37+ $2.7429 $101.4873
57+ $2.6571 $151.4547
78+ $2.5714 $200.5692
101+ $2.4857 $251.0557
135+ $2.2286 $300.8610
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