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Same model may have multiple batches, images only for reference.
IRF520NPBF Real Image
Same model may have multiple batches, images only for reference.

IRF520NPBF

Part No IRF520NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.7A TO-220AB
Datasheet
IRF520NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 200 mOhm @ 5.7A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046502-IRF520NPBF
Family Name IRF520N
Introduction Date November 07, 2003
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF520NPBF CAD Model

Description

The Infineon Technologies IRF520NPBF is a N-Channel MOSFET transistor used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Continuous Drain Current: 9.7A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 330pF @ 25V
  • Maximum Rds On at Id,Vgs: 200 mOhm @ 5.7A, 10V
  • Power Dissipation: 48W (Tc)
  • Mounting Type: Through Hole
  • Status: Active
  • Packaging: TO-220AB

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