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Same model may have multiple batches, images only for reference.
IRF5210PBF
Same model may have multiple batches, images only for reference.

IRF5210PBF

Part No IRF5210PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 40A TO-220AB
Datasheet
IRF5210PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 2700pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 091067-IRF5210PBF
Family Name IRF5210
Introduction Date January 30, 2004
ECCN EAR99
Country of Origin China, Philippines
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF5210PBF CAD Model

Description

The Infineon Technologies IRF5210PBF is a P-Channel MOSFET discrete semiconductor product with a maximum power dissipation of 200W (Tc) and a drain-source breakdown voltage of 100V.

  • Supply and Demand: sufficient
  • Status: active part
  • Usage: commonly used in the market

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115+ $0.8836 $101.6140
180+ $0.8538 $153.6840
255+ $0.7941 $202.4955
330+ $0.7642 $252.1860
410+ $0.7344 $301.1040
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