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IRF5305STRRPBF

Part No IRF5305STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 31A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046511-IRF5305STRRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Automotive, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF5305STRRPBF CAD Model

Description

The 1046511-IRF5305STRRPBF is a P-channel MOSFET with a drain-source breakdown voltage of 55V, manufactured by Infineon Technologies.

  • Continuous Drain Current: 31A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 63nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id, Vgs: 60 mOhm @ 16A, 10V
  • Power Dissipation: 3.8W (Ta), 110W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Package Type: D2PAK

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7672 $61.3760
165+ $0.7177 $118.4205
250+ $0.6930 $173.2500
360+ $0.6435 $231.6600
470+ $0.6188 $290.8360
585+ $0.5941 $347.5485
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,200 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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