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Same model may have multiple batches, images only for reference.
IRF530NSTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF530NSTRRPBF

Part No IRF530NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 17A D2PAK
Datasheet
IRF530NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 920pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.8W (Ta), 70W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046514-IRF530NSTRRPBF
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF530NSTRRPBF CAD Model

Description

The Infineon Technologies IRF530NSTRRPBF is a N-Channel MOSFET transistor from Infineon Technologies.

  • Channel Type: N-Channel
  • Packaging: Reel - TR
  • Mounting Type: SMD (SMT)
  • Power Dissipation: 3.8W (Ta), 70W (Tc)
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Case: D2PAK
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 17A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 37nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4008 $50.1000
270+ $0.3755 $101.3850
415+ $0.3628 $150.5620
595+ $0.3374 $200.7530
770+ $0.3247 $250.0190
965+ $0.3121 $301.1765
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Availability: 72,360 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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