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Same model may have multiple batches, images only for reference.
IRF6216TRPBF-1
Same model may have multiple batches, images only for reference.

IRF6216TRPBF-1

Part No IRF6216TRPBF-1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 2.2A SOT223 / P-Channel 150 V 2.2A (Ta) 2.5W (Ta) Surface Mount SOT-223
Datasheet
IRF6216TRPBF-1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 240mOhm @ 1.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1280 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
Standard Package 4,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 875017-IRF6216TRPBF-1
Ultra Librarian 3D Model Ultra Librarian IRF6216TRPBF-1 CAD Model

Description

The 875017-IRF6216TRPBF-1 is a single FET (Field-Effect Transistor) from Infineon Technologies.

  • Series: HEXFET®
  • FET Type: P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
  • Package: Tape & Reel
  • Standard Package: 4,000 pieces
  • Drain-to-Source Voltage (Vdss): 150V
  • Continuous Drain Current (Id): 2.2A @ 25°C
  • On-Resistance (Rds On): 240mOhm @ 1.3A and 10V
  • Gate Charge (Qg): 49nC @ 10V
  • Mounting Type: Surface Mount
  • Package: TO-261-4, TO-261AA
  • Status: Obsolete

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