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Same model may have multiple batches, images only for reference.
IRF630NSTRLPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF630NSTRLPBF

Part No IRF630NSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.3A D2PAK
Datasheet
IRF630NSTRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 575pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 82W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 5.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 116580-IRF630NSTRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF630NSTRLPBF CAD Model

Description

The IRF630NSTRLPBF is an N-channel MOSFET transistor from Infineon Technologies.

  • Popularity: High
  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 82W
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Continuous Drain Current: 9.3A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Suitable for: High-frequency applications, power switching, and DC-DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4953 $52.0065
220+ $0.4639 $102.0580
335+ $0.4483 $150.1805
480+ $0.4169 $200.1120
625+ $0.4012 $250.7500
780+ $0.3856 $300.7680
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,420 pieces
MOQ: 105 pcs
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