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Same model may have multiple batches, images only for reference.
IRF640NSPBF
Same model may have multiple batches, images only for reference.

IRF640NSPBF

Part No IRF640NSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A D2PAK
Datasheet
IRF640NSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069305-IRF640NSPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF640NSPBF CAD Model

Description

The Infineon Technologies IRF640NSPBF is an N-Channel polarity MOSFET transistor that has a maximum power dissipation of 150W (Tc) and a drain-source breakdown voltage of 200V.

  • Package: D2PAK case
  • Mounting: SMD (SMT)
  • Drive Voltage: 10V
  • Maximum Rds On: 150 mOhm @ 11A and 10V
  • Popularity: High
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3685 $51.5900
295+ $0.3448 $101.7160
455+ $0.3329 $151.4695
650+ $0.3091 $200.9150
845+ $0.2972 $251.1340
1,055+ $0.2853 $300.9915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 400,310 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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