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IRF6725MTR1PBF

Part No IRF6725MTR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 28A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 15 V
Power Dissipation (Max) 2.8W (Ta), 100W (Tc)
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX
Standard Package 1,000 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 849370-IRF6725MTR1PBF
Ultra Librarian 3D Model Ultra Librarian IRF6725MTR1PBF CAD Model

Description

The IRF6725MTR1PBF is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: HEXFET
  • Vdss: 30V
  • Id: 28A @ 25°C
  • Rds On: 2.2mOhm @ 28A and 10V
  • Mounting: surface mount
  • Package: DirectFET™ Isometric MX
  • Qg: 54nC @ 4.5V
  • Ciss: 4700pF @ 15V
  • Temperature Range: -40°C to 150°C
  • Status: obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9787 $59.3610
75+ $1.6236 $121.7700
115+ $1.5728 $180.8720
155+ $1.5221 $235.9255
200+ $1.4714 $294.2800
265+ $1.3192 $349.5880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,980 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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