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IRF6810STRPBF

Part No IRF6810STRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 25V 16A S1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 25μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1038pF @ 13V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.1W (Ta), 20W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 16A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET S1
Dimension DirectFET Isometric S1
Win Source Part Number 1046572-IRF6810STRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6810STRPBF CAD Model

Description

The Infineon Technologies IRF6810STRPBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Mounting: Surface mount technology
  • Case/Package: DirectFET S1
  • Drive Voltage: 4.5V to 10V
  • Maximum Power Dissipation (Ta): 2.1W
  • Maximum Power Dissipation (Tc): 20W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current (Ta): 16A
  • Continuous Drain Current (Tc): 50A
  • Maximum Gate Charge: 11nC @ 4.5V
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Popularity: Medium
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3534 $60.9030
105+ $1.1104 $116.5920
165+ $1.0758 $177.5070
225+ $1.0411 $234.2475
290+ $1.0064 $291.8560
385+ $0.9023 $347.3855
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 26,577 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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