IRF6810STRPBF

Part No IRF6810STRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 25V 16A S1
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 16A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 25μA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 1038pF @ 13V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.1W (Ta), 20W (Tc)
Maximum Rds On at Id,Vgs 5.2 mOhm @ 16A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET S1
Dimension DirectFET Isometric S1
Win Source Part Number 1046572-IRF6810STRPBF
Popularity Medium
Supply and Demand Status Balance

Description

The Infineon Technologies IRF6810STRPBF is an N-channel MOSFET transistor designed for use in discrete semiconductor products. It is mounted using surface mount technology and has a DirectFET S1 case/package. The drive voltage is 4.5V to 10V and it has a maximum power dissipation of 2.1W (Ta) and 20W (Tc). The IRF6810STRPBF has a drain-source breakdown voltage of 25V, a continuous drain current of 16A (Ta) and 50A (Tc), and a maximum gate charge of 11nC at 4.5V. It operates at a temperature range of -40°C to 150°C (TJ). This component has a medium level of popularity and a balanced supply and demand status.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
45+ $1.1717 $52.7265
105+ $0.9614 $100.9470
165+ $0.9314 $153.6810
225+ $0.9014 $202.8150
290+ $0.8713 $252.6770
385+ $0.7812 $300.7620
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 26,577 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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