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Same model may have multiple batches, images only for reference.
IRF7205PBF
Same model may have multiple batches, images only for reference.

IRF7205PBF

Part No IRF7205PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.6A 8-SOIC
Datasheet
IRF7205PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 40nC @ 10V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 4.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 017490-IRF7205PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF7205PBF CAD Model

Description

The Infineon Technologies IRF7205PBF is a P-channel MOSFET that is widely used in various electronic applications.

  • Popularity: High
  • Supply and Demand Status: Sufficient
  • Maximum Power Dissipation: 2.5W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On at Id, Vgs: 70 mOhm @ 4.6A, 10V
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 3V @ 250μA

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3813 $51.4755
320+ $0.3128 $100.0960
495+ $0.3031 $150.0345
685+ $0.2933 $200.9105
885+ $0.2835 $250.8975
1,185+ $0.2542 $301.2270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,600 pieces
MOQ: 135 pcs
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