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Same model may have multiple batches, images only for reference.
IRF7207TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7207TRPBF

Part No IRF7207TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.4A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 780pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 5.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046583-IRF7207TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7207TRPBF CAD Model

Description

The Infineon Technologies IRF7207TRPBF is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 5.4A.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.4A
  • Maximum Power Dissipation: 2.5W
  • Maximum Rds On: 60 mOhm @ 5.4A, 4.5V
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 22nC @ 4.5V
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5059 $58.1785
280+ $0.4158 $116.4240
430+ $0.4031 $173.3330
595+ $0.3892 $231.5740
770+ $0.3765 $289.9050
1,030+ $0.3373 $347.4190
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Availability: 15,000 pieces
MOQ: 115 pcs
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