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Same model may have multiple batches, images only for reference.
IRF7314QTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF7314QTRPBF

Part No IRF7314QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 5.2A 8SOIC
Datasheet
IRF7314QTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A
Maximum Rds On at Id,Vgs 58 mOhm @ 5.2A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 913pF @ 15V
Maximum Power Dissipation 2.4W
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046599-IRF7314QTRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7314QTRPBF CAD Model

Description

The 1046599-IRF7314QTRPBF is a P-channel dual FET with a logic level gate, designed for use in discrete semiconductor products. It is from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 5.2A
  • Maximum Power Dissipation: 2.4W
  • Gate-Source Threshold Voltage: 700mV @ 250μA
  • Maximum Gate Charge: 29nC @ 4.5V
  • Maximum Input Capacitance: 913pF @ 15V
  • Maximum Rds On @ Id, Vgs: 58 mOhm @ 5.2A, 4.5V
  • Package: 8-SO
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: Balanced
  • Quantity per Package: One unit

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305+ $0.3850 $117.4250
465+ $0.3730 $173.4450
640+ $0.3610 $231.0400
830+ $0.3490 $289.6700
1,110+ $0.3128 $347.2080
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Availability: 3,700 pieces
MOQ: 125 pcs
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