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IRF7326D2TRPBF

Name: IRF7326D2TRPBF
Brand: Infineon Technologies
SKU: 159878
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF7326D2TRPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 30V 3.6A 8-SOIC
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Obsolete(EOL)
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	1V @ 250μA
Max Gate Charge	25nC @ 10V
Max Input Capacitance	440pF @ 25V
Maximum Gate-Source Voltage	±20V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	2W (Ta)
Maximum Rds On at Id,Vgs	100 mOhm @ 1.8A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SO
Dimension	8-SOIC (0.154", 3.90mm Width)
Win Source Part Number	017506-IRF7326D2TRPBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF7326D2TRPBF CAD Model

Description

The Infineon Technologies 017506-IRF7326D2TRPBF is a P-channel MOSFET with a Schottky diode (isolated) feature.

Package: 8-SO case
Dimension: 8-SOIC (0.154", 3.90mm Width)
Maximum Drain-Source Breakdown Voltage: 30V
Continuous Drain Current: 3.6A (Ta) @ 25°C
Gate-Source Threshold Voltage: 1V @ 250μA
Maximum Gate Charge: 25nC @ 10V
Maximum Rds On at Id, Vgs: 100 mOhm @ 1.8A, 10V
Operating Temperature: -55°C to 150°C (TJ)
Status: Obsolete (EOL)
Ideal for: Discrete semiconductor products

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
100+	$0.5816	$58.1600
245+	$0.4772	$116.9140
375+	$0.4624	$173.4000
520+	$0.4474	$232.6480
670+	$0.4324	$289.7080
895+	$0.3878	$347.0810

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 4,050 pieces

MOQ: 100 pcs

Order Increment : 1 pcs

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