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Same model may have multiple batches, images only for reference.
IRF7379QTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7379QTRPBF

Part No IRF7379QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 8-SOIC
Datasheet
IRF7379QTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A, 4.3A
Maximum Rds On at Id,Vgs 45 mOhm @ 5.8A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 520pF @ 25V
Maximum Power Dissipation 2.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046621-IRF7379QTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7379QTRPBF CAD Model

Description

The IRF7379QTRPBF is an N and P-channel logic level gate FET from Infineon Technologies with a maximum power dissipation of 2.5W.

  • Maximum Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A @ 25°C
  • Maximum Rds On: 45 mOhm @ 5.8A and 10V
  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Status: Obsolete (EOL)
  • Popularity: Medium

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Quantity Unit Price Ext. Price
35+ $1.6817 $58.8595
85+ $1.3802 $117.3170
130+ $1.3363 $173.7190
180+ $1.2936 $232.8480
235+ $1.2509 $293.9615
310+ $1.1215 $347.6650
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Availability: 16,000 pieces
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