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Same model may have multiple batches, images only for reference.
IRF7413QPBF
Same model may have multiple batches, images only for reference.

IRF7413QPBF

Part No IRF7413QPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet, Power; N-ch; Vdss 30V; Rds(on) 0.011 Ohm; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V; Vf 1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOIC
Continuous Drain Current (ID) 13 A
Drain to Source Resistance 11 mΩ
Drain to Source Voltage (Vdss) 30 V
Dual Supply Voltage 30 V
Element Configuration Single
Fall Time 46 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.5 mm
Input Capacitance 1.8 nF
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Nominal Vgs 3 V
Number of Elements 1
Number of Pins 8
Power Dissipation 2.5 W
Radiation Hardening No
REACH SVHC No SVHC
Rise Time 50 ns
RoHS Compliant
Termination SMD/SMT
Turn-Off Delay Time 52 ns
Turn-On Delay Time 8.6 ns
Width 4 mm
Win Source Part Number 1065510-IRF7413QPBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF7413QPBF CAD Model

Description

The Infineon Technologies 1065510-IRF7413QPBF is an electronic component that is ideal for use in various applications.

  • Category: Transistors - FETs, MOSFETs - RF
  • RoHS Compliance: Compliant
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 1065510-IRF7413QPBF
  • Drain to Source Voltage (Vdss): 30 V
  • Continuous Drain Current (ID): 13 A
  • Gate to Source Voltage (Vgs): 20 V
  • Maximum Operating Temperature: 150 °C

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7090 $53.1750
175+ $0.5818 $101.8150
270+ $0.5636 $152.1720
370+ $0.5454 $201.7980
475+ $0.5273 $250.4675
635+ $0.4727 $300.1645
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Availability: 13,670 pieces
MOQ: 75 pcs
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