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Same model may have multiple batches, images only for reference.
IRF7416QPBF
Same model may have multiple batches, images only for reference.

IRF7416QPBF

Part No IRF7416QPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description -30V P-Channel HEXFET Power MOSFET in a LeadFree SO-8 -package
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 10 A
Drain to Source Resistance 20 mΩ
Fall Time 60 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.4986 mm
Input Capacitance 1.7 nF
Length 4.9784 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 8
Power Dissipation 2.5 W
Radiation Hardening No
Rise Time 49 ns
RoHS Compliant
Turn-Off Delay Time 59 ns
Turn-On Delay Time 18 ns
Width 3.9878 mm
Win Source Part Number 972610-IRF7416QPBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF7416QPBF CAD Model

Description

The IRF7416QPBF is a single RF element from Infineon Technologies.

  • Mounting Style: surface mount device
  • Pins: 8
  • Input Capacitance: 1.7nF
  • Power Dissipation: 2.5W
  • Rise Time: 49ns
  • Fall Time: 60ns
  • Operating Temperature Range: -55°C to 150°C
  • Package: SO
  • Popularity: low
  • RoHS Compliant: yes
  • Radiation Hardened: no

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.4076 $63.3420
100+ $1.1550 $115.5000
155+ $1.1190 $173.4450
215+ $1.0829 $232.8235
280+ $1.0468 $293.1040
370+ $0.9385 $347.2450
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Availability: 49 pieces
MOQ: 45 pcs
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