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IRF7459TRPBF

Part No IRF7459TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 12A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2480pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 9 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046649-IRF7459TRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7459TRPBF CAD Model

Description

The Infineon Technologies IRF7459TRPBF is an N-channel MOSFET transistor.

  • Category: discrete semiconductor products
  • Package: 8-SO
  • Power Dissipation: 2.5W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 12A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 35nC @ 4.5V
  • Maximum Input Capacitance: 2480pF @ 10V
  • Maximum Rds On: 9 mOhm @ 12A, 10V
  • Supply and Demand Status: balanced
  • Quantity Per Package: 4k pcs

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