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IRF7807TRPBF

Part No IRF7807TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R / MOSFET N-CH 30V 8.3A 8-SOIC
Datasheet
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001939-IRF7807TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management
Family Name IRF7807
Introduction Date October 10, 2000
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IRF7807TRPBF CAD Model

Description

The IRF7807TRPBF is a high-popularity N-channel MOSFET power transistor manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.3A (Ta)
  • Maximum Rds On: 25 mOhm @ 7A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Package: 8-SOIC (0.154", 3.90mm Width)

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7541 $60.3280
190+ $0.6188 $117.5720
290+ $0.5994 $173.8260
400+ $0.5802 $232.0800
515+ $0.5608 $288.8120
690+ $0.5028 $346.9320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,785 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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