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Same model may have multiple batches, images only for reference.
IRF7811AVPBF Real Image
Same model may have multiple batches, images only for reference.

IRF7811AVPBF

Part No IRF7811AVPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.8A 8-SOIC
Datasheet
IRF7811AVPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 26nC @ 5V
Max Input Capacitance 1801pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 15A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 001950-IRF7811AVPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7811AVPBF CAD Model

Description

The Infineon Technologies 001950-IRF7811AVPBF is a discontinued electronic component that belongs to the Discrete Semiconductor Products category.

  • Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 14 mOhm @ 15A, 4.5V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.6888 $63.4440
12+ $10.4113 $124.9356
18+ $10.0859 $181.5462
24+ $9.7606 $234.2544
31+ $9.4353 $292.4943
41+ $8.4592 $346.8272
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