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IRF7832ZTR Real Image
Same model may have multiple batches, images only for reference.

IRF7832ZTR

Part No IRF7832ZTR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A 8-SOIC
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 45nC @ 4.5V
Max Input Capacitance 3860pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 3.8 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069395-IRF7832ZTR
Popularity Medium
Supply and Demand Status Balance
Quantity per package 4k pcs
Ultra Librarian 3D Model Ultra Librarian IRF7832ZTR CAD Model

Description

The Infineon Technologies 069395-IRF7832ZTR is an N-Channel MOSFET designed for use in electronic components.

  • Maximum Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Package: 8-SO
  • Mounting: Surface Mount Technology
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Continuous Drain Current: 21A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 250μA
  • Suitable for: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.4343 $65.1450
365+ $0.3565 $130.1225
565+ $0.3454 $195.1510
775+ $0.3343 $259.0825
1,005+ $0.3230 $324.6150
1,340+ $0.2896 $388.0640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,270 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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