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IRF8010PBF

Part No IRF8010PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 80A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3830pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 260W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 040702-IRF8010PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF8010
Introduction Date July 06, 2004
ECCN EAR99
Country of Origin China, Philippines, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRF8010PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel polarity component designed to operate in a temperature range of -55°C to 175°C (TJ).

  • Maximum Power Dissipation: 260W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 80A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 3830pF @ 25V
  • Maximum Rds On: 15 mOhm @ 45A, 10V
  • Market Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8976 $53.8560
120+ $0.8408 $100.8960
185+ $0.8124 $150.2940
265+ $0.7556 $200.2340
345+ $0.7272 $250.8840
430+ $0.6988 $300.4840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,320 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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Shipping Information

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