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IRF8252TRPBF

Part No IRF8252TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 25A 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 25A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 100μA
Max Gate Charge 53nC @ 4.5V
Max Input Capacitance 5305pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 069406-IRF8252TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF8252TRPBF CAD Model

Description

The Infineon Technologies IRF8252TRPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current Rating @ 25°C: 25A
  • Gate-Source Threshold Voltage: 2.35V @ 100μA
  • Maximum Gate Charge: 53nC @ 4.5V
  • Maximum Input Capacitance: 5305pF @ 13V
  • Maximum Rds On @ Id,Vgs: 2.7 mOhm @ 25A, 10V
  • Package: 8-SO
  • Power Dissipation: 2.5W (Ta)
  • Status: Obsolete (EOL)
  • Recommendation: Not recommended for new designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.0178 $60.5340
70+ $1.6551 $115.8570
110+ $1.6043 $176.4730
150+ $1.5523 $232.8450
195+ $1.5003 $292.5585
260+ $1.3456 $349.8560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 101,800 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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