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Same model may have multiple batches, images only for reference.
IRF9335TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9335TRPBF

Part No IRF9335TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 5.4A 8-SOIC
Datasheet
IRF9335TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 10μA
Max Gate Charge 14nC @ 10V
Max Input Capacitance 386pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta)
Maximum Rds On at Id,Vgs 59 mOhm @ 5.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1046771-IRF9335TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9335TRPBF CAD Model

Description

The Infineon Technologies IRF9335TRPBF is a MOSFET transistor with P-channel polarity.

  • Polarity: P-Channel
  • Power Dissipation: 2.5W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.4A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 10μA
  • Rds On (Max): 59 mOhm @ 5.4A, 10V
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Application: Discrete Semiconductor Products, Power Management
  • Status: Active
  • Popularity: Medium

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240+ $0.4226 $101.4240
370+ $0.4094 $151.4780
505+ $0.3962 $200.0810
655+ $0.3830 $250.8650
875+ $0.3433 $300.3875
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