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IRF9389PBF

Part No IRF9389PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6.8A/4.6A 8-SO / Mosfet Array N and P-Channel 30V 6.8A, 4.6A 2W Surface Mount 8-SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Infineon Technologies
Series HEXFET®
Package Tube
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.8A, 4.6A
Rds On (Max) @ Id, Vgs 27mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 398pF @ 15V
Power - Max 2W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Base Product Number IRF9389
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001555848
Standard Package 3,800
Win Source Part Number 1065529-IRF9389PBF
Ultra Librarian 3D Model Ultra Librarian IRF9389PBF CAD Model

Description

The IRF9389PBF is a HEXFET™ N and P-Channel MOSFET transistor that comes in an 8-SOIC (0.154", 3.90mm Width) package.

  • Type: HEXFET™ N and P-Channel MOSFET
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6.8A and 4.6A
  • Maximum On-Resistance: 27mOhm @ 6.8A and 10V
  • Applications: Power supplies, motor control, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2919 $51.0825
420+ $0.2396 $100.6320
650+ $0.2321 $150.8650
895+ $0.2246 $201.0170
1,155+ $0.2171 $250.7505
1,545+ $0.1946 $300.6570
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 53,075 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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