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Same model may have multiple batches, images only for reference.
IRFB3077GPBF Real Image
Same model may have multiple batches, images only for reference.

IRFB3077GPBF

Part No IRFB3077GPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 120A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 9400pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 370W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205338-IRFB3077GPBF
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian IRFB3077GPBF CAD Model

Description

The Infineon Technologies IRFB3077GPBF MOSFET is a N-channel polarity transistor that is designed for use in Discrete Semiconductor Products.

  • Maximum Power Dissipation: 370W (Tc)
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current at 25°C: 120A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Rds On at Id, Vgs: 3.3 mOhm @ 75A, 10V
  • Technology: Through Hole
  • Package: TO-220AB
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 220nC @ 10V
  • Maximum Input Capacitance: 9400pF @ 50V
  • Status: obsolete (EOL)
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8492 $64.7220
80+ $1.5177 $121.4160
120+ $1.4703 $176.4360
165+ $1.4230 $234.7950
210+ $1.3756 $288.8760
285+ $1.2335 $351.5475
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Availability: 31,000 pieces
MOQ: 35 pcs
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