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Same model may have multiple batches, images only for reference.
IRFB3507 Real Image
Same model may have multiple batches, images only for reference.

IRFB3507

Part No IRFB3507
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 97A TO-220AB
Datasheet
IRFB3507 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 97A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3540pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 128795-IRFB3507
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFB3507 CAD Model

Description

The Infineon Technologies IRFB3507 is a N-channel MOSFET that is designed to handle power dissipation of up to 190W (Tc).

  • Status: Obsolete (EOL)
  • Mounting: Through-Hole
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current at 25°C: 97A (Tc)
  • Maximum Rds On at Id, Vgs: 8.8 mOhm @ 58A, 10V
  • Gate-Source Threshold Voltage: 4V @ 100μA

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