The Infineon Technologies IRFB4110GPBF is a N-channel MOSFET with a drain-source breakdown voltage of 100V and a maximum continuous drain current of 120A (Tc).

• Drain-Source Breakdown Voltage: 100V
• Maximum Continuous Drain Current: 120A (Tc)
• Power Dissipation: 370W (Tc)
• Maximum Rds On: 4.5 mOhm @ 75A, 10V
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 210nC @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Input Capacitance: 9620pF @ 50V
• Application: Discrete semiconductor products
• Popularity: High