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IRFH5304TRPBF

Part No IRFH5304TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A 8VQFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 22A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 2360pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 46W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 47A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerVDFN
Win Source Part Number 205359-IRFH5304TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFH5304TRPBF CAD Model

Description

The Infineon Technologies IRFH5304TRPBF is a commonly used N-Channel MOSFET transistor in the market.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Maximum Continuous Drain Current: 22A
  • Supply and Demand Status: Sufficient
  • Maximum Input Capacitance: 2360pF @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4481 $51.5315
275+ $0.3677 $101.1175
425+ $0.3562 $151.3850
585+ $0.3447 $201.6495
755+ $0.3332 $251.5660
1,005+ $0.2988 $300.2940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,500 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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