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Same model may have multiple batches, images only for reference.
IRFH8318TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFH8318TRPBF

Part No IRFH8318TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 50A 5X6 PQFN
Datasheet
IRFH8318TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 50μA
Max Gate Charge 41nC @ 10V
Max Input Capacitance 3180pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 59W (Tc)
Maximum Rds On at Id,Vgs 3.1 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Dimension 8-PowerTDFN
Win Source Part Number 099333-IRFH8318TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFH8318TRPBF CAD Model

Description

The Infineon Technologies IRFH8318TRPBF is a MOSFET with N-channel polarity.

  • Transistor Polarity: N-channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 27A @ 25°C and 120A @ Tc
  • Maximum Power Dissipation: 3.6W (Ta) and 59W (Tc)
  • Package: PQFN (5x6)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 3.1 mOhm @ 20A, 10V
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2925 $51.1875
365+ $0.2740 $100.0100
570+ $0.2647 $150.8790
815+ $0.2462 $200.6530
1,060+ $0.2369 $251.1140
1,320+ $0.2277 $300.5640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,830 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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