The IRFHM8235TRPBF is an N-Channel MOSFET from Infineon Technologies, suitable for use in various applications, particularly in discrete semiconductor products.

• Power Dissipation: 3W (Ta) or 30W (Tc)
• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 16A (Ta) @ 25°C
• Gate-Source Threshold Voltage: 2.35V @ 25μA
• Maximum Gate Charge: 12nC @ 4.5V
• Maximum Input Capacitance: 1040pF @ 10V
• Maximum Rds On: 7.7 mOhm @ 20A and 10V
• Packaging: 8-PQFN (3.3x3.3), Power33
• Operating Temperature Range: -55°C to 150°C (TJ)
• Status: Active
• Supply and Demand Balance: Medium