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Same model may have multiple batches, images only for reference.
IRFHM8329TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFHM8329TRPBF

Part No IRFHM8329TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A PQFN
Datasheet
IRFHM8329TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 25μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1710pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.6W (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 6.1 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (3x3)
Dimension 8-PowerTDFN
Win Source Part Number 1046910-IRFHM8329TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFHM8329TRPBF CAD Model

Description

The Infineon Technologies IRFHM8329TRPBF is an N-channel MOSFET. Infineon Technologies

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (Ta): 16A @ 25°C
  • Continuous Drain Current (Tc): 57A @ 25°C
  • Gate-Source Threshold Voltage: 2.2V @ 25μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 1710pF @ 10V
  • Maximum Rds On: 6.1 mOhm @ 20A, 10V
  • Package: PQFN (3x3)
  • Suitability: Suitable for use in discrete semiconductor products.

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120+ $0.8540 $102.4800
185+ $0.8273 $153.0505
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435+ $0.6938 $301.8030
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