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IRFI4019H-117P Real Image IRFI4019H-117P real image337
Same model may have multiple batches, images only for reference.
IRFI4019H-117P Real Image IRFI4019H-117P real image337
IRFI4019H-117P Real Image IRFI4019H-117P real image337
Same model may have multiple batches, images only for reference.

IRFI4019H-117P

Part No IRFI4019H-117P
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 150V 8.7A TO-220FP
Datasheet
IRFI4019H-117P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 8.7A
Maximum Rds On at Id,Vgs 95 mOhm @ 5.2A, 10V
Gate-Source Threshold Voltage 4.9V @ 50μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 810pF @ 25V
Maximum Power Dissipation 18W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-5 Full-Pak
Win Source Part Number 040718-IRFI4019H-117P
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFI4019H-117P CAD Model

Description

The Infineon Technologies 040718-IRFI4019H-117P is a dual N-channel standard FET.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 8.7A @ 25°C
  • Maximum Power Dissipation: 18W
  • Packaging: TO-220-5 full-pak
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 4.9V @ 50μA
  • Maximum Rds On at Id,Vgs: 95 mOhm @ 5.2A, 10V
  • Suitable for: use in various applications, including power management, DC-DC converters, and motor control.

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44+ $3.4702 $152.6888
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104+ $2.9105 $302.6920
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