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Same model may have multiple batches, images only for reference.
IRFIZ34VPBF
Same model may have multiple batches, images only for reference.

IRFIZ34VPBF

Part No IRFIZ34VPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 20 A
Current Rating 20 A
Drain to Source Voltage (Vdss) 60 V
Dual Supply Voltage 60 V
Lead Free Yes
Maximum Operating Temperature 175 °C
Max Power Dissipation 30 W
Min Operating Temperature -55 °C
Nominal Vgs 4 V
Number of Pins 3
Packaging Bulk
Power Dissipation 30 W
REACH SVHC No SVHC
Rise Time 65 ns
RoHS Compliant
Voltage Rating (DC) 60 V
Win Source Part Number 1065557-IRFIZ34VPBF
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRFIZ34VPBF CAD Model

Description

The Infineon Technologies 1065557-IRFIZ34VPBF is a MOSFET transistor designed for RF applications.

  • Current: 20 A
  • Drain-to-Source Voltage: 60 V
  • Power Dissipation: 30 W
  • Rise Time: 65 ns
  • Packaging: Bulk
  • Pins: 3
  • RoHS Compliant: Yes
  • Lead-Free: Yes
  • Maximum Operating Temperature: 175 °C
  • Minimum Operating Temperature: -55 °C
  • Alternative Part: IRFIZ34VPBFIRFIZ34VPBF

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Quantity Unit Price Ext. Price
30+ $2.1498 $64.4940
70+ $1.7641 $123.4870
105+ $1.7089 $179.4345
140+ $1.6537 $231.5180
185+ $1.5987 $295.7595
245+ $1.4333 $351.1585
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Availability: 72,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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